{"id":14668,"date":"2020-09-30T17:55:22","date_gmt":"2020-09-30T15:55:22","guid":{"rendered":"https:\/\/stage.muegge.de\/amelioration-de-la-qualite-dans-les-micro-machines-et-les-mems\/"},"modified":"2020-09-30T17:55:23","modified_gmt":"2020-09-30T15:55:23","slug":"amelioration-de-la-qualite-dans-les-micro-machines-et-les-mems","status":"publish","type":"post","link":"https:\/\/muegge-group.com\/fr\/amelioration-de-la-qualite-dans-les-micro-machines-et-les-mems\/","title":{"rendered":"Amelioration de la qualit\u00e9 dans les micro-machines et les MEMS"},"content":{"rendered":"\t\t
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Retrait des r\u00e9sines \u00e9paisses et implant\u00e9es par le plasma micro-ondes isotrope<\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Le plasma micro-ondes est la solution parfaite pour \u00e9liminer les r\u00e9sines \u00e9paisses (photor\u00e9sist) implant\u00e9es dans les structures 2D et 3D dans les micromachines et les syst\u00e8mes micro\u00e9lectrom\u00e9caniques (MEMS). L'avantage du plasma micro-ondes par rapport au plasma HF est crucial : les mati\u00e8res organiques peuvent \u00eatre enlev\u00e9es sans endommager et sans alt\u00e9rer les couches et les structures sous-jacentes.<\/span><\/pre>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Plasma micro-ondes - Retrait rapide et isotrope de photor\u00e9sist <\/h5>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Alors que le plasma HF est la m\u00e9thode la plus courante pour graver des couches minces, le plasma HF n’est pas id\u00e9al pour le retrait de la r\u00e9sine photosensible \u00e9paisse (photor\u00e9sist ) implant\u00e9e dans les structures 2D et 3D en raison de sa nature anisotrope (directionnelle). Les esp\u00e8ces r\u00e9actives g\u00e9n\u00e9r\u00e9es dans le plasma HF sont dirig\u00e9es vers le substrat et ne sont pas capables d’\u00e9liminer le photor\u00e9sist d\u00e9pos\u00e9 dans les structures 3D si cette structures sont prot\u00e9g\u00e9es \u00e0 l\u2019exposition directe. De plus, l’effet thermique d\u00fb \u00e0 la pulv\u00e9risation provoquera la polym\u00e9risation de photor\u00e9sist \u00e9pais pendant la gravure anisotrope.<\/span><\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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MUEGGE Remote plasma micro-ondes r\u00e9sout ces probl\u00e8mes<\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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  • \n\t\t\t\t\t\t\t\t\t\t\t\n\t\t\t\t\t\t\t<\/i>\t\t\t\t\t\t<\/span>\n\t\t\t\t\t\t\t\t\t\tAucun plasma est g\u00e9n\u00e9r\u00e9 en dehors de la source, seuls les radicaux atteignent le substrat. En cons\u00e9quece, le syst\u00e8me remote plasma est id\u00e9al pour les applications qui doivent absolument \u00e9viter les effets physiques, tels que le bombardement ionique et la charge thermique \u00e9lev\u00e9e - aucune polym\u00e9risation ou carbonisation ne se produit et la r\u00e9sine est retir\u00e9e m\u00eame des surfaces les plus sensibles (par exemple, les capteurs).<\/span><\/span>\n\t\t\t\t\t\t\t\t\t<\/li>\n\t\t\t\t\t\t\t\t
  • \n\t\t\t\t\t\t\t\t\t\t\t\n\t\t\t\t\t\t\t<\/i>\t\t\t\t\t\t<\/span>\n\t\t\t\t\t\t\t\t\t\tLes radicaux g\u00e9n\u00e9r\u00e9s n'initient une r\u00e9action chimique qu'\u00e0 la surface du substrat. En cons\u00e9quence, l\u2019effet thermique est extr\u00eamement faible, ce qui garantit une gravure isotrope sans d\u00e9fauts \u00e0 des vitesses \u00e9lev\u00e9s.<\/span><\/span>\n\t\t\t\t\t\t\t\t\t<\/li>\n\t\t\t\t\t\t<\/ul>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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    <\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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    Figure 1 : Vitesse de gravure relative vs. la puissance micro-ondes et le temps de gravure \u00e0 150 \u00b0C. Mesur\u00e9 par r\u00e9flectom\u00e9trie en ligne pour deux recettes de plasma diff\u00e9rentes.<\/figcaption>\n\t\t\t\t\t\t\t\t\t\t<\/figure>\n\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t
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    Figure 2 : Vitesse moyenne de gravure de photor\u00e9sist standard vs. puissance micro-ondes \u00e0 150 \u00b0 C. Exemple pour deux recettes de plasma et temps de gravure differents.<\/figcaption>\n\t\t\t\t\t\t\t\t\t\t<\/figure>\n\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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    Les avantages du proc\u00e9d\u00e9 plasma micro-ondes<\/h5>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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    La fabrication de MEMS n\u00e9cessite une large gamme d’applications pour le retrait de photor\u00e9sist. Le plasma micro-ondes permet d’obtenir le retrait de photor\u00e9sist \u00e0 vitesse tr\u00e8s \u00e9lev\u00e9e et avec haute s\u00e9lectivit\u00e9 ainsi que la gravure sur les mat\u00e9riaux sensibles aux CF4 et O2. Le plasma micro-ondes est sp\u00e9cialement con\u00e7u pour une gravure rapide sans d\u00e9fauts suppl\u00e9mentaires \u00e0 la surface du substrat. Le plasma micro-ondes offre la possibilit\u00e9 de retirer compl\u00e8tement le photor\u00e9sist \u00e0 vitesse (> 200um \/ h) et s\u00e9lectivit\u00e9 \u00e9lev\u00e9es sans l\u2019alt\u00e9ration des couches inf\u00e9rieures. Les radicaux g\u00e9n\u00e9r\u00e9s produisent que des r\u00e9actions chimiques en surface, conduisant \u00e0 une gravure chimique pure \u00e0 vitesse \u00e9lev\u00e9e avec une dissipation thermique extr\u00eamement faible, en gardant l’effet thermique sur le substrat aussi faible que possible. Aucun champ \u00e9lectrique et aucun ion ne sont pr\u00e9sents au niveau du substrat, donc aucun d\u00e9faut des structures critiques ne se produit.<\/p>\n
    Les plasmas micro-ondes sont \u00e9cologiques ; le proc\u00e9d\u00e9 est propice pour l\u2019environnement due \u00e0 la dissociation presque compl\u00e8te des mol\u00e9cules gazeuses utilis\u00e9es dans le process, par exemple CF4.<\/span><\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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    <\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"
    Retrait des r\u00e9sines \u00e9paisses et implant\u00e9es par le plasma micro-ondes isotrope Le plasma micro-ondes est la solution parfaite pour \u00e9liminer les r\u00e9sines \u00e9paisses (photor\u00e9sist) implant\u00e9es dans les structures 2D et 3D dans les micromachines et les syst\u00e8mes micro\u00e9lectrom\u00e9caniques (MEMS). L’avantage du plasma micro-ondes par rapport au plasma HF est crucial : les mati\u00e8res organiques peuvent […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[4447,4448],"tags":[],"class_list":["post-14668","post","type-post","status-publish","format-standard","hentry","category-mems-fr","category-semi-conducteurs"],"acf":[],"yoast_head":"\nAmelioration de la qualit\u00e9 dans les micro-machines et les MEMS - Muegge<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/muegge-group.com\/quality-improvement-in-micromachinery-and-mems\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Amelioration de la qualit\u00e9 dans les micro-machines et les MEMS - Muegge\" \/>\n<meta property=\"og:description\" content=\"Retrait des r\u00e9sines \u00e9paisses et implant\u00e9es par le plasma micro-ondes isotrope Le plasma micro-ondes est la solution parfaite pour \u00e9liminer les r\u00e9sines \u00e9paisses (photor\u00e9sist) implant\u00e9es dans les structures 2D et 3D dans les micromachines et les syst\u00e8mes micro\u00e9lectrom\u00e9caniques (MEMS). 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