{"id":14673,"date":"2020-09-30T17:59:46","date_gmt":"2020-09-30T15:59:46","guid":{"rendered":"https:\/\/stage.muegge.de\/controle-endpoint-pour-le-retrait-de-photoresist-epais\/"},"modified":"2020-09-30T18:00:30","modified_gmt":"2020-09-30T16:00:30","slug":"controle-endpoint-pour-le-retrait-de-photoresist-epais","status":"publish","type":"post","link":"https:\/\/muegge-group.com\/fr\/controle-endpoint-pour-le-retrait-de-photoresist-epais\/","title":{"rendered":"Contr\u00f4le Endpoint pour le retrait de photor\u00e9sist \u00e9pais"},"content":{"rendered":"\t\t
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Le retrait compl\u00e8te de photor\u00e9sist \u00e9pais n\u00e9cessite une d\u00e9tection ad\u00e9quate du point final (Endpoint)<\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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L’application d’un plasma micro-ondes pour retirer une r\u00e9sine \u00e9paisse telle que celle utilis\u00e9e pour les micro-machines et les syst\u00e8mes micro\u00e9lectrom\u00e9caniques (MEMS) n\u00e9cessite une d\u00e9tection ad\u00e9quate du point final pour limiter l’exposition inutile du substrat et des autres surfaces sensibles aux gaz r\u00e9actifs. Les propri\u00e9t\u00e9s uniques du plasma micro-ondes permettent une d\u00e9tection facile et pr\u00e9cise des points finaux \u00e0 l’aide de capteurs de temp\u00e9rature.<\/span><\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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Plasma micro-ondes - Retrait isotrope de photor\u00e9sist avec le moindre effet thermique<\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Le plasma HF expose le substrat \u00e0 une quantit\u00e9 relativement \u00e9lev\u00e9e d’esp\u00e8ces charg\u00e9es (ions), en conformit\u00e9 avec la distribution d’\u00e9nergie dans le plasma. Ces ions transf\u00e8rent de l’\u00e9nergie cin\u00e9tique lorsqu’ils frappent la surface du substrat en provoquant son \u00e9chauffement. Selon les conditions du proc\u00e9d\u00e9, ce chauffage est critique pour l’int\u00e9grit\u00e9 du substrat ; le refroidissement du substrat est n\u00e9cessaire pour rester dans la plage de temp\u00e9rature sp\u00e9cifi\u00e9e. Avec le Remote plasma micro-ondes de Muegge, l’effet thermique \/ \u00e9nerg\u00e9tique est extr\u00eamement faible, aucune particule charg\u00e9e n\u2019est lib\u00e9r\u00e9e dans la chambre de traitement. En cons\u00e9quence, le substrat reste froid, la seule source de chaleur est la r\u00e9action chimique exothermique correspondant au retrait de photor\u00e9sist ; la variation de la temp\u00e9rature peut \u00eatre utilis\u00e9 pour suivre la progression du processus de nettoyage.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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Les solutions de Muegge - pr\u00e9cises, fiables et reproductibles<\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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Bien que la d\u00e9tection optique des points finaux soit mature et fiable, elle n\u00e9cessite un investissement substantiel dans des \u00e9quipements suppl\u00e9mentaires tels que l’interf\u00e9rom\u00e9trie et les algorithmes de contr\u00f4le sophistiqu\u00e9s. Pour les applications moins exigeantes (par exemple, le retrait de photoresist), les clients recherchent des solutions moins complexes. La temp\u00e9rature comme indicateur de la progression de la r\u00e9action est un choix \u00e9vident mais g\u00e9n\u00e9ralement pas facile \u00e0 suivre en raison des effets secondaires physiques par les esp\u00e8ces g\u00e9n\u00e9r\u00e9es (par exemple, augmentation de la temp\u00e9rature due \u00e0 la pulv\u00e9risation).<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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Le retrait de photor\u00e9sist avec des radicaux permet un suivi pr\u00e9cis de la chaleur lib\u00e9r\u00e9e par la r\u00e9action chimique (exothermique). La collecte de donn\u00e9es est facile \u00e0 r\u00e9aliser, fiable et reproductible.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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Endpoint d\u00e9tection pour diff\u00e9rents substrats<\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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Figure 1 : Exemple de Endpoint d\u00e9tection pour deux substrats diff\u00e9rents ; d\u00e9tection de la temp\u00e9rature du chaque substrat individuel<\/figcaption>\n\t\t\t\t\t\t\t\t\t\t<\/figure>\n\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t
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Les avantages de Endpoint d\u00e9tection bas\u00e9e sur la temp\u00e9rature<\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Diff\u00e9rentes applications n\u00e9cessitent diff\u00e9rentes technologies pour le contr\u00f4le Endpoint dans la production industrielle. L’utilisation de la temp\u00e9rature du substrat pendant le retrait de photor\u00e9sist offre une m\u00e9thode fiable pour d\u00e9tecter le Endpoint ; cependant, la technologie plasma HF produit trop de bruit pour pouvoir diff\u00e9rencier entre la chaleur de r\u00e9action et les autres m\u00e9canismes de chauffage. Le retrait de photor\u00e9sist par plasma micro-ondes permet de collecter des donn\u00e9es de temp\u00e9rature avec une r\u00e9solution suffisante pour la d\u00e9tection du point final. Les capteurs de temp\u00e9rature fonctionnent de mani\u00e8re fiable pour la plage de pression typique au plasma micro-ondes sans aucun mat\u00e9riel suppl\u00e9mentaire. Le signal est stable et exempt d’interf\u00e9rences car il ne d\u00e9pend que de la r\u00e9action chimique qui se d\u00e9roule sur le substrat. La sur-gravure peut \u00eatre facilement d\u00e9riv\u00e9e du point final, les changements dans la chambre de traitement (par exemple, les fuites, le d\u00e9bit de gaz) se refl\u00e9teront dans la courbe du point final et aideront \u00e0 ajuster les cycles de maintenance pr\u00e9ventive. La d\u00e9tection est intrins\u00e8quement tr\u00e8s stable et ne n\u00e9cessite pas de recalibrage en cas d’ajustements de processus. C’est une caract\u00e9ristique des syst\u00e8mes micro-ondes Muegge (s\u00e9rie STP) d\u00e9j\u00e0 \u00e9prouv\u00e9e dans la production industrielle.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"

Le retrait compl\u00e8te de photor\u00e9sist \u00e9pais n\u00e9cessite une d\u00e9tection ad\u00e9quate du point final (Endpoint) L’application d’un plasma micro-ondes pour retirer une r\u00e9sine \u00e9paisse telle que celle utilis\u00e9e pour les micro-machines et les syst\u00e8mes micro\u00e9lectrom\u00e9caniques (MEMS) n\u00e9cessite une d\u00e9tection ad\u00e9quate du point final pour limiter l’exposition inutile du substrat et des autres surfaces sensibles aux gaz […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[4447,4448],"tags":[],"class_list":["post-14673","post","type-post","status-publish","format-standard","hentry","category-mems-fr","category-semi-conducteurs"],"acf":[],"yoast_head":"\nContr\u00f4le Endpoint pour le retrait de photor\u00e9sist \u00e9pais - Muegge<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/muegge-group.com\/endpoint-control-for-thick-photoresist-removal\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Contr\u00f4le Endpoint pour le retrait de photor\u00e9sist \u00e9pais - 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