{"id":14679,"date":"2020-09-30T18:06:06","date_gmt":"2020-09-30T16:06:06","guid":{"rendered":"https:\/\/stage.muegge.de\/le-retrait-de-photoresist-apres-haute-dose-implantation-hdis\/"},"modified":"2020-09-30T18:06:06","modified_gmt":"2020-09-30T16:06:06","slug":"le-retrait-de-photoresist-apres-haute-dose-implantation-hdis","status":"publish","type":"post","link":"https:\/\/muegge-group.com\/fr\/le-retrait-de-photoresist-apres-haute-dose-implantation-hdis\/","title":{"rendered":"Le retrait de photor\u00e9sist apr\u00e8s-Haute Dose Implantation (HDIS)"},"content":{"rendered":"\t\t
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Le Haute Dose Implantion Stripage (HDIS) - Processus difficile dans la fabrication de semi-conducteurs<\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Le retrait de photor\u00e9sist apr\u00e8s l\u2019implantation \u00e0 haute dose reste l’un des processus les plus exigeants dans l\u2019industrie des semi-conducteurs. Le d\u00e9fi consiste \u00e0 retirer \u00e0 la fois la cro\u00fbte (ou la couche durcie form\u00e9e lors de l’implantation) ainsi que le photor\u00e9sist sans br\u00fbler la cro\u00fbte et sans laisser des r\u00e9sidus carbonis\u00e9s qui sont tr\u00e8s difficiles \u00e0 nettoyer. Le retrait contr\u00f4l\u00e9 \u00e0 basse temp\u00e9rature de la mati\u00e8re organique dans la cro\u00fbte et de photor\u00e9sist est la cl\u00e9 d\u2019un processus propre.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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Plasma micro-ondes - \u00c9limination isotrope de la r\u00e9sine implant\u00e9e (photor\u00e9sist) avec le moindre effet thermique<\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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En raison de sa nature physiquee, le plasma HF expose le substrat \u00e0 un apport relativement \u00e9lev\u00e9 d’esp\u00e8ces charg\u00e9es (ions). Ces ions transf\u00e8rent leur \u00e9nergie cin\u00e9tique lorsqu’ils frappent la surface et font chauffer le substrat. La temp\u00e9rature \u00e9lev\u00e9e est tr\u00e8s d\u00e9favorable \u00e0 la retraite de photor\u00e9sist post haute dose implantation car elle est favorable \u00e0 la poursuite de la cuisson et du durcissement de la cro\u00fbte. Le refroidissement du substrat aide \u00e0 emp\u00eacher l’\u00e9chauffement volumique du substrat mais il ne peut pas \u00e9viter un chauffage local de la surface o\u00f9 la r\u00e9action chimique a lieu ; en cons\u00e9quence, m\u00eame si la temp\u00e9rature moyenne est maintenue basse, la temp\u00e9rature locale reste \u00e9lev\u00e9e car la r\u00e9action sous-jacente (pulv\u00e9risation ionique) n’est pas affect\u00e9e par le refroidissement. En utilisant le plasma micro-ondes de Muegge, le transfert d’\u00e9nergie est extr\u00eamement faible, aucune particule charg\u00e9e ne se forme dans la chambre de traitement. En cons\u00e9quence, le substrat reste froid, la seule source de chaleur est la r\u00e9action chimique exothermique associ\u00e9e avec le retrait de photor\u00e9sist. Comme la chaleur de r\u00e9action est un r\u00e9sultat direct du processus de retrait de photor\u00e9sist, elle peut \u00eatre facilement contr\u00f4l\u00e9e par les conditions du processus.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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La solution de Muegge - pr\u00e9cise, fiable et reproductible<\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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Le plasma micro-ondes utilise efficacement l’\u00e9nergie pour former des esp\u00e8ces neutres tr\u00e8s r\u00e9actives appel\u00e9es radicaux. Les ions porteurs d’\u00e9nergie cin\u00e9tique et qui provoquent l’\u00e9chauffement du substrat ne se forment pas. Par cons\u00e9quent, le remote plasma micro-ondes est id\u00e9al pour retirer les r\u00e9sines implant\u00e9es \u00e0 haute dose o\u00f9 le contr\u00f4le de la temp\u00e9rature est essentiel – aucune polym\u00e9risation ou carbonisation suppl\u00e9mentaire ne se produit et la r\u00e9sine implant\u00e9e peut \u00eatre retir\u00e9e en douceur.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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Les radicaux produits gr\u00e2ce au plasma micro-ondes garantissent le retrait chimique pure et en douceur de la r\u00e9sine. En cons\u00e9quence, l\u2019effet thermique est extr\u00eamement faible, ce qui garantit le retrait isotrope de la r\u00e9sine, sans carbonisation.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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Le plasma micro-ondes pour le contr\u00f4le flexible des proc\u00e9d\u00e9s \u00e0 basse temp\u00e9rature<\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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Figure 1 : La temp\u00e9rature de la surface de l'applicateur (chauffage et refroidissement) vs. temps ; puissance micro-ondes 2000 W.<\/figcaption>\n\t\t\t\t\t\t\t\t\t\t<\/figure>\n\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t
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Figure 2 : Vitesse de gravure moyenne de photor\u00e9sist standard \u00e0 3000 W puissance micro-ondes constante, avec ou sans CF4 \u00e0 T = 150 \u00b0C ; sans plaque chauffante (chauffage d\u00e9sactiv\u00e9)<\/figcaption>\n\t\t\t\t\t\t\t\t\t\t<\/figure>\n\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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La formation de radicaux entra\u00eene tr\u00e8s peu ou pas d’interaction avec les parois internes de la chambre plasma, la temp\u00e9rature reste basse (Figure 1). Le processus chimique pur HDIS peut \u00eatre peaufin\u00e9
\npour les trois \u00e9tapes du processus de retrait:<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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  • \n\t\t\t\t\t\t\t\t\t\t\t\n\t\t\t\t\t\t\t<\/i>\t\t\t\t\t\t<\/span>\n\t\t\t\t\t\t\t\t\t\tLe retrait de la cro\u00fbte<\/span>\n\t\t\t\t\t\t\t\t\t<\/li>\n\t\t\t\t\t\t\t\t
  • \n\t\t\t\t\t\t\t\t\t\t\t\n\t\t\t\t\t\t\t<\/i>\t\t\t\t\t\t<\/span>\n\t\t\t\t\t\t\t\t\t\tLe retrait de photor\u00e9sist<\/span>\n\t\t\t\t\t\t\t\t\t<\/li>\n\t\t\t\t\t\t\t\t
  • \n\t\t\t\t\t\t\t\t\t\t\t\n\t\t\t\t\t\t\t<\/i>\t\t\t\t\t\t<\/span>\n\t\t\t\t\t\t\t\t\t\tLe retrait de r\u00e9sidues<\/span>\n\t\t\t\t\t\t\t\t\t<\/li>\n\t\t\t\t\t\t<\/ul>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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    Pas d’ions = pas besoin de refroidissement suppl\u00e9mentaire du substrat.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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    Les avantages du processus par radicaux pour le retrait de photoresist implant\u00e9 \u00e0 haute dose <\/h4>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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    Les trois \u00e9tapes de HDIS n\u00e9cessitent une flexibilit\u00e9 adapt\u00e9e aux diff\u00e9rentes exigences de chaque \u00e9tape (Figure 2). Le plasma micro-ondes permet de couper \u00e0 travers la cro\u00fbte, de retirer le photor\u00e9sist sans la formation de bulles (popping) ou sa carbonisation et de retirer les r\u00e9sidus en douceur et avec une s\u00e9lectivit\u00e9 \u00e9lev\u00e9e. Par ses propri\u00e9t\u00e9s physiques, le plasma micro-ondes est sp\u00e9cialement con\u00e7u pour une combustion rapide sans affecter les zones sensibles du substrat. Les radicaux g\u00e9n\u00e9r\u00e9s dans le plasma micoondes favorisent la r\u00e9action chimique en surface. Dans l’absence de champs \u00e9lectriques mesurables et des ions pr\u00e9sents au niveau du substrat, aucun d\u00e9fet des structures critiques ne se produit. Le plasma micro-ondes est un processus propice a l’environnement due \u00e0 la dissociation presque compl\u00e8te des mol\u00e9cules gazeuses utilis\u00e9es, e.g. CF4.<\/p>\n\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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    <\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"

    Le Haute Dose Implantion Stripage (HDIS) – Processus difficile dans la fabrication de semi-conducteurs Le retrait de photor\u00e9sist apr\u00e8s l\u2019implantation \u00e0 haute dose reste l’un des processus les plus exigeants dans l\u2019industrie des semi-conducteurs. Le d\u00e9fi consiste \u00e0 retirer \u00e0 la fois la cro\u00fbte (ou la couche durcie form\u00e9e lors de l’implantation) ainsi que le […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[4447,4448],"tags":[],"class_list":["post-14679","post","type-post","status-publish","format-standard","hentry","category-mems-fr","category-semi-conducteurs"],"acf":[],"yoast_head":"\nLe retrait de photor\u00e9sist apr\u00e8s-Haute Dose Implantation (HDIS) - Muegge<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/muegge-group.com\/photoresist-removal-after-high-dose-implant-hdis\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Le retrait de photor\u00e9sist apr\u00e8s-Haute Dose Implantation (HDIS) - Muegge\" \/>\n<meta property=\"og:description\" content=\"Le Haute Dose Implantion Stripage (HDIS) – Processus difficile dans la fabrication de semi-conducteurs Le retrait de photor\u00e9sist apr\u00e8s l\u2019implantation \u00e0 haute dose reste l’un des processus les plus exigeants dans l\u2019industrie des semi-conducteurs. Le d\u00e9fi consiste \u00e0 retirer \u00e0 la fois la cro\u00fbte (ou la couche durcie form\u00e9e lors de l’implantation) ainsi que le […]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/muegge-group.com\/photoresist-removal-after-high-dose-implant-hdis\/\" \/>\n<meta property=\"og:site_name\" content=\"Muegge\" \/>\n<meta property=\"article:published_time\" content=\"2020-09-30T16:06:06+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/muegge.de\/wp-content\/uploads\/2019\/12\/muegge-blog-quality-leaps-in-micromachinery-and-mems-01.jpg\" \/>\n<meta name=\"author\" content=\"Steven Guggolz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"\u00c9crit par\" \/>\n\t<meta name=\"twitter:data1\" content=\"Steven Guggolz\" \/>\n\t<meta name=\"twitter:label2\" content=\"Dur\u00e9e de lecture estim\u00e9e\" \/>\n\t<meta name=\"twitter:data2\" content=\"4 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/muegge-group.com\\\/photoresist-removal-after-high-dose-implant-hdis\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/muegge-group.com\\\/photoresist-removal-after-high-dose-implant-hdis\\\/\"},\"author\":{\"name\":\"Steven Guggolz\",\"@id\":\"https:\\\/\\\/muegge-group.com\\\/fr\\\/#\\\/schema\\\/person\\\/e21b90232b4c3e83f26157c3cd5cf452\"},\"headline\":\"Le retrait de photor\u00e9sist apr\u00e8s-Haute Dose Implantation (HDIS)\",\"datePublished\":\"2020-09-30T16:06:06+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/muegge-group.com\\\/photoresist-removal-after-high-dose-implant-hdis\\\/\"},\"wordCount\":797,\"commentCount\":0,\"publisher\":{\"@id\":\"https:\\\/\\\/muegge-group.com\\\/fr\\\/#organization\"},\"image\":{\"@id\":\"https:\\\/\\\/muegge-group.com\\\/photoresist-removal-after-high-dose-implant-hdis\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/muegge.de\\\/wp-content\\\/uploads\\\/2019\\\/12\\\/muegge-blog-quality-leaps-in-micromachinery-and-mems-01.jpg\",\"articleSection\":[\"MEMS\",\"Semi-conducteurs\"],\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"CommentAction\",\"name\":\"Comment\",\"target\":[\"https:\\\/\\\/muegge-group.com\\\/photoresist-removal-after-high-dose-implant-hdis\\\/#respond\"]}]},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/muegge-group.com\\\/photoresist-removal-after-high-dose-implant-hdis\\\/\",\"url\":\"https:\\\/\\\/muegge-group.com\\\/photoresist-removal-after-high-dose-implant-hdis\\\/\",\"name\":\"Le retrait de photor\u00e9sist apr\u00e8s-Haute Dose Implantation (HDIS) - 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