Muegge Products

Plasma components

Plasma components
  • Radical plasma source (Remote Plasma Source)

    Item number: MA2000C-783BB

    Process
    Etching & Deposition
    Output Connection Type
    Dielectric material
    Ceramics
    Mains voltage nominal [V]
    230 / 208
    Output Power CW [W]
    2000
    Frequency [MHz]
    2450

    Radikalquelle (Remote-Plasma-Quelle)

    More details
  • Radical plasma source (Remote Plasma Source)

    Item number: MA2000C-793BB

    Process
    Etching & Deposition
    Output Connection Type
    Dielectric material
    Ceramics
    Mains voltage nominal [V]
    230 / 208
    Output Power CW [W]
    2000
    Frequency [MHz]
    2450

    Radikalquelle (Remote-Plasma-Quelle)

    More details
  • Radical plasma source (Remote Plasma Source)

    Item number: MA2000C-823BB

    Process
    Etching & Deposition
    Output Connection Type
    Dielectric material
    Sapphire
    Mains voltage nominal [V]
    230 / 208
    Output Power CW [W]
    2000
    Frequency [MHz]
    2450

    Radikalquelle (Remote-Plasma-Quelle)

    More details
  • Radical plasma source (Remote Plasma Source)

    Item number: MA2000C-833BB

    Process
    Etching & Deposition
    Output Connection Type
    Dielectric material
    Sapphire
    Mains voltage nominal [V]
    230 / 208
    Output Power CW [W]
    3000
    Frequency [MHz]
    2450

    Radikalquelle (Remote-Plasma-Quelle)

    More details
  • Radical plasma source (Remote Plasma Source)

    Item number: MA2000C-863BB

    Process
    Etching & Deposition
    Output Connection Type
    Dielectric material
    Sapphire
    Mains voltage nominal [V]
    230 / 208
    Output Power CW [W]
    2000
    Frequency [MHz]
    2450

    Radikalquelle (Remote-Plasma-Quelle)

    More details
  • Radical plasma source (Remote Plasma Source)

    Item number: MA2000C-873BB

    Process
    Etching & Deposition
    Output Connection Type
    Dielectric material
    Sapphire
    Mains voltage nominal [V]
    230 / 208
    Output Power CW [W]
    2000
    Frequency [MHz]
    2450

    Radikalquelle (Remote-Plasma-Quelle)

    More details
  • Radical plasma source (Remote Plasma Source)

    Item number: MA2000C-903BB

    Process
    Etching & Deposition
    Output Connection Type
    Dielectric material
    Sapphire
    Mains voltage nominal [V]
    230 / 208
    Output Power CW [W]
    2000
    Frequency [MHz]
    2450

    Radikalquelle (Remote-Plasma-Quelle)

    More details
  • Radical plasma source (Remote Plasma Source)

    Item number: MA2000C-913BB

    Process
    Etching & Deposition
    Output Connection Type
    Dielectric material
    Sapphire
    Mains voltage nominal [V]
    230 / 208
    Output Power CW [W]
    2000
    Frequency [MHz]
    2450

    Radikalquelle (Remote-Plasma-Quelle)

    More details

PLASMA COMPONENTS

Semiconductor technology has changed our view of the world – but plasma processing has made it possible to produce products for everyone. High-density microwave-assisted plasma sources perform superiorly in etching and deposition systems that require high etching rates without electrical charging or damage to the material.

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Our leading role as a manufacturer of plasma components helps you to develop and adapt your systems – while ensuring fast market entry and low CoO. As part of our “”turnkey”” product range, we offer plasma components for a variety of different production tools and applications:

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  • High density deposition of oxide and nitride layers

    • SU-8 distance

  • Highly selective removal of organic materials
  • Non-oxidizing chemistry for cleaning of oxygen sensitive materials (H2 process)
  • Damage-free cleaning of sensitive surfaces (e.g. sensors) and 3D structures
  • Isotropic chamber cleaning
  • LIGA process (lithography, electroplating and shaping)